c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . WBP13005D WBP13005D WBP13005D WBP13005D rev.a aug.201 1 high voltage fast -switching npn power transistor features ? very high switching speed ? high voltage capability ? wide reverse bias soa ? built-in free wheeling diode general description this device is designed for high voltage, high speed switching characteristics required such as lighting system ,switching mode power supply. absolute maximum ratings symbol parameter test conditions value units v ces collector-emitter voltage v be =0 700 v v ceo collector-emitter voltage i b =0 400 v v ebo emitter-base voltage i c =0 9.0 v i c collector current 4 a i cp collector pulse current 8 a i b base current 2 a i bm base peak current t p =5ms 4 a p c total dissipation 75 w t j operation junction temperature 150 t stg storage temperature - 55 ~150 thermal characteristics symbol parameter value units r ? jc thermal resistance junction to case 3.12 /w r ? ja thermal resistance junction to ambient 8.9 /w
WBP13005D WBP13005D WBP13005D WBP13005D 2 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance electrical characteristics (tc=25 unless otherwise noted) symbol parameter test conditions value units min typ max v ceo(sus) collector-emitter sustaining voltage i b =0,i c =10ma 400 - - v i cbo collector -base cutoff current v cb =700v,i e =0 - - 100 a i ce o collector -emitter cutoff current v ce =400v,i b =0 - - 50 a i ebo emitter -base cutoff current v be =9v i c =0 - - 1 0 a v ce(sat) collector -emitter saturation voltage i c =1.0a,i b =0.2a i c =4.0a,i b =1.0a - - 1 .5 2 .0 v v be(sat) base -emitter saturation voltage i c =2.0a,i b =0.5a - - 1. 8 v hfe dc current gain i c =500 m a,v ce = 10 v i c = 2 a,v ce =5v 8 5 - 5 0 - ts tf storage time fall time i c = 2 a,v cc = 24 v i b1 =-i b2 =0.4a - - 4 0. 7 s f t current gain bandwidth product i c =0.5a,v ce =10v 4 - - mhz v f diode forward voltage i f = 4 a - - 2 v note: pulse test :pulse width 300, duty cycle 2%
WBP13005D WBP13005D WBP13005D WBP13005D 3 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.1 dc current gain fig.2 saturation voltage fig.3 safe operation fig.4 power derating fig.5 static characteristics
WBP13005D WBP13005D WBP13005D WBP13005D 4 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance resistive load switching test circuit inductive load switching & rbsoa test circuit
WBP13005D WBP13005D WBP13005D WBP13005D 5 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance to-220 to-220 to-220 to-220 hw hw hw hw package package package package dimension dimension dimension dimension unit:mm
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